- 您现在的位置：买卖IC网 > Sheet目录312 > AT26DF161-SU (Atmel)IC FLASH 16MBIT 66MHZ 8SOIC
AT26DF161
Figure 8-1.
Byte Program
CS
0
1
2
3
4
5
6
7
8
9
10 11 12
29 30 31 32 33 34 35 36 37 38 39
SCK
OPCODE
ADDRESS BITS A23-A0
DATA IN
SI
0
0
0
0
0
0
1
0
A
A
A
A
A
A
A
A
A
D
D
D
D
D
D
D
D
Figure 8-2.
CS
SO
Page Program
MSB
HIGH-IMPEDANCE
MSB
MSB
0
1
2
3
4
5
6
7
8
9
29 30 31 32 33 34 35 36 37 38 39
SCK
OPCODE
ADDRESS BITS A23-A0
DATA IN BYTE 1
DATA IN BYTE n
SI
0
0
0
0
0
0
1
0
A
A
A
A
A
A
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
8.2
MSB
HIGH-IMPEDANCE
SO
Block Erase
MSB
MSB
MSB
A block of 4K-, 32K-, or 64K-bytes can be erased (all bits set to the logical “1” state) in a single
operation by using one of three different opcodes for the Block Erase command. An opcode of
20h is used for a 4K-byte erase, an opcode of 52h is used for a 32K-byte erase, and an opcode
of D8h is used for a 64K-byte erase. Before a Block Erase command can be started, the Write
Enable command must have been previously issued to the device to set the WEL bit of the Sta-
tus Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h,
52h, or D8h) must be clocked into the device. After the opcode has been clocked in, the three
address bytes specifying an address within the 4K-, 32K-, or 64K-byte block to be erased must
be clocked in. Any additional data clocked into the device will be ignored. When the CS pin is
deasserted, the device will erase the appropriate block. The erasing of the block is internally
self-timed and should take place in a time of t BLKE .
Since the Block Erase command erases a region of bytes, the lower order address bits do not
need to be decoded by the device. Therefore, for a 4K-byte erase, address bits A11-A0 will be
ignored by the device and their values can be either a logical “1” or “0”. For a 32K-byte erase,
address bits A14-A0 will be ignored, and for a 64K-byte erase, address bits A15-A0 will be
ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deas-
serted; otherwise, the device will abort the operation and no erase operation will be performed.
9
3599H–DFLASH–8/09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
AT26DF161A-MU
IC FLASH 16MBIT 70MHZ 8QFN
AT26DF321-SU
IC FLASH 32MBIT 66MHZ 8SOIC
AT27BV010-90JU
IC OTP 1MBIT 90NS 32PLCC
AT27BV020-90JU
IC OTP 2MBIT 90NS 32PLCC
AT27BV040-12JU
IC OTP 4MBIT 120NS 32PLCC
AT27BV1024-90JU
IC OTP 1MBIT 90NS 44PLCC
AT27BV256-70JU
IC OTP 256KBIT 70NS 32PLCC
AT27BV4096-12VI
IC OTP 4MBIT 120NS 40VSOP
相关代理商/技术参数
AT26DF321
制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:32-megabit 2.7-volt Only Serial Firmware DataFlash Memory
AT26DF321_06
制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:32-megabit 2.7-volt Only Serial Firmware DataFlash Memory
AT26DF321_07
制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:32-megabit 2.7-volt Only Serial Firmware DataFlash Memory
AT26DF321-S3U
功能描述:闪存 32M SERIAL FLASH - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT26DF321-SU
功能描述:闪存 32M SERIAL FLASH - IND TEMP RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
AT26DF321-SU SL514
制造商:Atmel Corporation 功能描述:
AT26F004
制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit 2.7-volt Only Serial Firmware DataFlash Memory
AT26F004_06
制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:4-megabit 2.7-volt Only Serial Firmware DataFlash Memory